unisonic technologies co., ltd 1n60p power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-634.a 1.2a, 600v n-channel power mosfet ? description the utc 1n60p is a high voltage power mosfet and is designed to have better characteri stics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristic. this power mosfet is usually used at high speed switching applications of power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) =11.5 ? @v gs = 10v. * ultra low gate charge (typical 5.0nc) * low reverse transfer capacitance (c rss = typical 3.0 pf) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 1n60pl-t92-b 1N60PG-T92-B to-92 g d s tape box 1n60pl-t92-k 1n60pg-t92-k to-92 g d s bulk 1n60pl-t92-r 1n60pg-t92-r to-92 g d s tape reel note: pin assignment: g: gate d: drain s: source
1n60p power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-634.a ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 1.2 a continuous drain current i d 1.2 a pulsed drain current (note 2) i dm 4.8 a single pulsed (note 3) e as 50 mj avalanche energy repetitive (note 2) e ar 4.0 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation (t a =25 ) p d 1 w junction temperature t j +150 operating temperature t opr -55 ~ +150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 60mh, i as = 1a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 1.2a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 140 /w
1n60p power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-634.a ? electrical characteristics (t c =25 , unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 600 v drain-source leakage current i dss v ds =600v, v gs =0v 10 a forward v gs =30v, v ds =0v 100 na gate-source leakage current reverse i gss v gs =-30v, v ds =0v -100 na breakdown voltage temperature coefficient bv dss /t j i d =250 a 0.4 v/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =0.6a 9.3 11.5 ? dynamic characteristics input capacitance c iss 120 150 pf output capacitance c oss 20 25 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1mhz 3.0 4.0 pf switching characteristics turn-on delay time t d(on) 5 20 ns turn-on rise time t r 25 60 ns turn-off delay time t d(off) 7 25 ns turn-off fall time t f v dd =300v, i d =1.2a, r g =50 ? (note 2, 3) 25 60 ns total gate charge q g 5.0 6.0 nc gate-source charge q gs 1.0 nc gate-drain charge q gd v ds =480v, v gs =10v, i d =1.2a (note 2, 3) 2.6 nc source-drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v, i s =1.2a 1.4 v maximum continuous drain-source diode forward current i s 1.2 a maximum pulsed drain-source diode forward current i sm 4.8 a reverse recovery time t rr 160 ns reverse recovery charge q rr v gs =0v, i s =1.2a di f /dt=100a/ s (note 1) 0.3 c notes: 1. repetitive rating: pulse widt h limited by maximum junction temperature 2. pulse test: pulse width 300 s, duty cycle 2% 3. essentially independent of operating temperature
1n60p power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-634.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt test circuit peak diode reco very dv/dt waveforms
1n60p power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-634.a ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
1n60p power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-634.a ? typical characteristics drain current, i d (ma) drain current, i d (a) drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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